MTB10N40E ,10 Amp D2PAK Surface Mount Products, N-Channel, VDSS 400ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTB1306 ,OBSOLETEhttp://onsemi.com3, DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS)R I , DRAIN CUR ..
MTB20N20E ,TMOS POWER FET 20 AMPERES 200 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTB23P06 ,TMOS POWER FET 23 AMPERES 60 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTB29N15ET4 ,Power MOSFET 29 Amps, 150 Volts3R , DRAIN-TO-SOURCE RESISTANCE R , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURRENT (AMPS)DS(on ..
MTB2N40E ,TMOS POWER FET 2.0 AMPERES 400 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
N8284N , Clock Generator and Driver for 8066, 8088 Processors
N82HS195BN , PHILIPS COMPONENTS-SIGNETICS
N82HS195BN , PHILIPS COMPONENTS-SIGNETICS
N82S23N ,256-bit TTL bipolar PROM 32 x 8
N8344AH , SDLC Communications Controller
N83C196KB , COMMERCIAL/EXPRESS CHMOS MICROCONTROLLER
MTB10N40E
10 Amp D2PAK Surface Mount Products, N-Channel, VDSS 400
-- - $ # -- " "!
N–Channel Enhancement–Mode Silicon GateThe D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This high voltage
MOSFET uses an advanced termination scheme to provide
enhanced voltage–blocking capability without degrading perfor-
mance over time. In addition, this advanced TMOS E–FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Short Heatsink Tab Manufactured — Not Sheared Specially Designed Leadframe for Maximum Power Dissipation Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4
Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
