MT6L71FS ,Dual radio-frequency bipolar transistorElectrical Characteristics Q2 (Ta = 25°C) Characteristic Symbol Condition Min Typ. Max UnitCollecto ..
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MT6L71FS
Dual radio-frequency bipolar transistor
MT6L71FS
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications
Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6.
• Superior noise characteristics Superior performance in buffer and oscillator applications
Mounted Devices
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1:
Note 2:
Marking (top view) Pin Assignment (top view) Unit: mm 5 4 2 3 E2 B2 C2E1