MT4S32U ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low Noise Figure: NF = 1.4 dB (f = 2 GHz) 2 High Gain: |S21e| = 13.5 d ..
MT55L512L18P , 8Mb ZBT SRAM
MT58L256L36P , 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM
MT58L64L36FT-8.5 , 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L64L36FT-8.5 , 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L64L36FT-8.5 , 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
N2514-6002RB , .100” x .100” Low Profile, SMT Straight, Straight and Rt Angle Through-Hole
N2576S-3.3 , 52 KHz 3A Step-Down Switching Voltage Regulator (SVR)
N2576T , 52 KHz 3A Step-Down Switching Voltage Regulator (SVR)
N2576T-3.3 , 52 KHz 3A Step-Down Switching Voltage Regulator (SVR)
N2596SG-5 , 150 KHz 3A Step-Down Switching Voltage Regulator (SVR)-Preliminary
N2596SG-5 , 150 KHz 3A Step-Down Switching Voltage Regulator (SVR)-Preliminary
MT4S32U
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
MT4S32U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT4S32U VHF~UHF Band Low Noise Amplifier Applications Low Noise Figure: NF = 1.4 dB (f = 2 GHz) High Gain: |S21e|2 = 13.5 dB (f = 2 GHz)
Maximum Ratings (Ta ��� � 25°C)
Marking Unit: mm
Weight: 0.006 g (typ.) Type name
2 1
3 4
