MT4S200T ,Radio-frequency SiGe Heterojunction Bipolar Transistorabsolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
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MT4S200T
Radio-frequency SiGe Heterojunction Bipolar Transistor
MT4S200T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE
MT4S200T UHF-SHF Low Noise Amplifier Application
Features Low Noise Figure :NF=1.7dB (@f=5.8GHz)
• High Gain:|S21e|2 =11dB (@f=5.8GHz)
Marking
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit:mm
Weight: 0.0015 g (typ.) 3 2
