MT4S101U ,TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE UHF LOW NOISE AMPLIFIER APPLICATIONMT4S101U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S101U UHF LOW NOISE A ..
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MT4S102U ,Radio-frequency SiGe Heterojunction Bipolar TransistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitCollec ..
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MT4S101U
TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE UHF LOW NOISE AMPLIFIER APPLICATION
MT4S101U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE
MT4S101U UHF LOW NOISE AMPLIFIER APPLICATION
FEATURES Low Noise Figure :NF=0.8dB (@f=2GHz) High Gain:|S21e|2 =16.0dB (@f=2GHz)
Marking
Maximum Ratings (Ta = 25°C) Tstg
Unit: mm
Weight: 0.006 g (typ.)
Type name
2 1
3 4
