MT4S03BU ,Radio-frequency bipolar transistorElectrical Characteristics (Ta = 25°C) Characteristic Symbol Condition Min Typ. MaxUnitCollector cu ..
MT4S06 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2..0n(Vnm=3V, In=3mA, f-- 2GHz)I g e,retrrilr--i-'ti';lTThrh (19inV“ "' -I2= ..
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MT4S100U ,TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE UHF LOW NOISE AMPLIFIER APPLICATIONFEATURES 1.25 0.1± Low Noise Figure :NF=0.72dB (@f=2GHz) 2 High Gain:|S21e| =16.0dB (@f=2GHz) ..
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MT4S03BU
Radio-frequency bipolar transistor
MT4S03BU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT4S03BU VHF~UHF Band Low Noise Amplifier Applications Low Noise Figure: NF = 1.6dB (typ.) (@f = 2GHz)
• High Gain: |S21e|2 = 9dB (typ.) (@f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C) Note.1: The device is mounted on a FR4 board (500mm2 x 1.55 mm (t))
Note.2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking Unit: mm
Weight: 6 mg (typ.)
Type Name 3 2
