MT3S46T ,TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATIONFEATURES Low Noise Figure :NF=1.2dB (@f=2GHz) 2 High Gain:|S21e| =11.5dB (@f=2GHz) Marking ..
MT4532-131Y , Low Impedance Chip Ferrite Beads
MT46V16M8TG-75 , DOUBLE DATA RATE DDR SDRAM
MT46V2M32V1 , DOUBLE DATA RATE DDR SDRAM
MT46V32M16P-6TF , 512Mb: x4, x8, x16 Double Data Rate SDRAM Features
MT46V32M16TG-75Z , DOUBLE DATA RATE DDR SDRAM
MX29LV320CBXEC-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320CBXEC-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320CBXEC-90G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320CTTC-70 , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320CTTI-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320CTTI-90 , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MT3S46T
TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION
MT3S46T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S46T VCO OSCILLETOR STAGE
UHF LOW NOISE AMPLIFIER APPLICATION
FEATURES Low Noise Figure :NF=1.2dB (@f=2GHz) High Gain:|S21e|2 =11.5dB (@f=2GHz)
Marking
Maximum Ratings (Ta = 25°C) Tstg
Unit: mm
Weight:0.0022g (typ.) 2
