MT3S22P ,Radio-frequency bipolar transistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitColle ..
MT3S35T ,TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATIONFEATURES Low Noise Figure :NF=1.4dB (@f=2GHz) 2 High Gain:|S21e| =13.0dB (@f=2GHz) Marking ..
MT3S36FS ,TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATIONFEATURES Low Noise Figure :NF=1.3dB (@f=2GHz) 2 High Gain:|S21e| =12.5dB (@f=2GHz) 1 3 2 0.1± ..
MT3S37T ,TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATIONFEATURES Low Noise Figure :NF=1.2dB (@f=2GHz) 2 High Gain:|S21e| =12.0dB (@f=2GHz) Marking ..
MT3S45T ,TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATIONFEATURES Low Noise Figure :NF=1.1dB (@f=2GHz) 2 High Gain:|S21e| =12.0dB (@f=2GHz) Marking ..
MT3S46T ,TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATIONFEATURES Low Noise Figure :NF=1.2dB (@f=2GHz) 2 High Gain:|S21e| =11.5dB (@f=2GHz) Marking ..
MX29LV320BTI-90 , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320BTI-90G , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320BXBC-70 , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320CBTC-70 , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320CBXEC-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320CBXEC-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MT3S22P
Radio-frequency bipolar transistor
MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
FEATURES Low Noise Figure: NF = 1.5dB (typ.) (@f=1GHz)
• High Gain: |S21e|2 = 10.5dB (typ.) (@f=1GHz)
Marking
Absolute Maximum Ratings (Ta = 25°C) × 25mm × 0.8 mm (t))
Note.2 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
Weight: 0.05 g (Typ.)
