MT3S16U ,Radio-frequency bipolar transistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Condition Min Typ. MaxUnitI V = 5 V, ..
MT3S19TU ,Radio-frequency bipolar transistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitColle ..
MT3S22P ,Radio-frequency bipolar transistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitColle ..
MT3S35T ,TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATIONFEATURES Low Noise Figure :NF=1.4dB (@f=2GHz) 2 High Gain:|S21e| =13.0dB (@f=2GHz) Marking ..
MT3S36FS ,TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATIONFEATURES Low Noise Figure :NF=1.3dB (@f=2GHz) 2 High Gain:|S21e| =12.5dB (@f=2GHz) 1 3 2 0.1± ..
MT3S37T ,TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATIONFEATURES Low Noise Figure :NF=1.2dB (@f=2GHz) 2 High Gain:|S21e| =12.0dB (@f=2GHz) Marking ..
MX29LV320BTI-12 , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320BTI-12G , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320BTI-70 , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320BTI-70G , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320BTI-90 , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320BTI-90G , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MT3S16U
Radio-frequency bipolar transistor
MT3S16U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S16U UHF Band Oscillator and Amplifier Applications fT is high and current dependability is excellent. The characteristic of Reverse transfer capacitance (Cre) is flat.
: NF = 2.4dB (typ.) (@ 2V, 5mA, 1 GHz)
: |S21e|2 = 4.5dB (typ.) (@ 2V, 10mA, 1 GHz)
Marking
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note.1: The device is mounted on a FR4 board (20mm X 25mm X 1.55 mm (t))
Unit: mm
Weight : 6 mg (Typ.)
Type Name
1 2
