MT3S150P ,Gallium-Arsenide heterojunction bipolar transistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitCollec ..
MT3S16U ,Radio-frequency bipolar transistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Condition Min Typ. MaxUnitI V = 5 V, ..
MT3S19TU ,Radio-frequency bipolar transistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitColle ..
MT3S22P ,Radio-frequency bipolar transistorElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max UnitColle ..
MT3S35T ,TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATIONFEATURES Low Noise Figure :NF=1.4dB (@f=2GHz) 2 High Gain:|S21e| =13.0dB (@f=2GHz) Marking ..
MT3S36FS ,TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATIONFEATURES Low Noise Figure :NF=1.3dB (@f=2GHz) 2 High Gain:|S21e| =12.5dB (@f=2GHz) 1 3 2 0.1± ..
MX29LV320BTC-12 , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320BTC-70 , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320BTC-70 , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320BTC-70G , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320BTC-90 , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320BTC-90 , 32 BIT 4M X 8 / 2M X 16 ] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MT3S150P
Gallium-Arsenide heterojunction bipolar transistor
MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type
MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application
FEATURES Low Noise Figure: NF=0.95dB (@f=1 GHz)
• High Gain: |S21e|2 =11.5dB (@f=1 GHz)
Marking
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The device is mounted on a ceramic board (250mm2 X0.8 mm (t))
Unit: mm
Weight: 50 mg (typ.)
