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MT3S111TU
Radio-frequency SiGe Heterojunction Bipolar Transistor
MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application
Features Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz)
• High Gain: |S21e|2 =12.5 dB (typ.) (@ f=1 GHz)
Marking
Absolute Maximum Ratings (Ta = 25°C) Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
Weight: 6.6 mg (typ.) 2
