MT3S06S ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmT .nw Nni m: Fi m1 ret0'=1%dTt1.6:02Whm=3V,In=3mA,f= 2GHz)0.8:.t0.1F—T—fl ~3| ..
MT3S06T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmL05l , 1.2:0.05 Il 0.8 i 0.05221C0 T.nw Nnign Fianna . NF = 1 RAR I(Vnm=3V, ..
MT3S06T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSMT3506TTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TMTRQDETVHF-UHF BAND LOW NOISE AMPLIFIER
MT3S06U ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmZ1IU1O T.nw Nnign Fianna . NF = 1 RAR “1.25:0.1”(Vnm=3V, In=3mA, f-- 2GHz)TT ..
MT3S07FS , VHF~UHF Band Low-Noise Amplifier Applications
MT3S07S ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmT .nw Nni m: Fi m1 reNF215dR1.6:02-.v -Whm=3V,In=5mA,f= 2GHz)0.8:.t0.1F—T—fl ..
MX29LV320ABTC-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ABTC-90G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ABTC-90G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATTC-90G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATTI-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ATTI-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MT3S06S
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA MT3SO6S
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
MT3S06S
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm
0 Low Noise Figure : NF = 1.6 dB
(VCE=3V,IC=3mA,f=2GHz) Mi
0 High Gain .' iSZIei2 = 9.5 dB N. 7 3 F- I
(VCE=3V,IC=7mA,f=2GHz) Ciiels,. 2 D3
g u, l :+,',i'
t,.', _r)',r l i g
MAXIMUM RATINGS (Ta = 25°C) "ii-
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 10 V l. BASE
. 2. EMITTER
Collector-Emi; Voltage VCEO 5 V SSM 3. COLLECTOR
Emitter-Base Voltage VEBO 1.5 V
Base Current IC 15 mA JEDEC -
Collector Current IB 7 mA EIAJ -
Collector Power Dissipation PC 60 mW TOSHIBA 2-2H1A
Junction Temperature 'I) 125 °C Weight : 0.0024g
Storage Temperature Range Tstg -55--125 "C
MARKING
000707EAA1
OTOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the res onsibility of the buyer, when utilizing TOSHIBA products, to compl with the standards of safety in
making a sa e design for the entire system, and to avoid situations in which a maliimction or failure of such TOSHIBA
products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set
forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set
forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics applications (computer,
personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These
TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high
quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury
("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments,
transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of
safetylievices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's
own ris .
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
2000-09-11 1/2
TOSHIBA MT3SO6S
MICROWAVE CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Transition Frequency fT VCE = 3 V, IC = 5 mA 7 10 - GHz
V = 1 V, I = 5mA,
ISZIe|2(1) f g}; GHz C - 8.5 -
Insertion Gain ls F (2) VCE = 3V, IC = 7mA, 6 5 9 5 dB
Me f = 2 GHz . . -
NF (1) svyij, Zézv’ 1C = 3 mA, - 1.7 3
Noise Figure NF(2) VCE = 3V, IC = 3 mA, 1 6 3 dB
f = 2 GHz - .
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 5V, IE = 0 - - 0.1 PA
Emitter Cut-off Current IEBO VEB = 1 V, 1C = 0 - - 1 PA
DC Current Gain hFE VCE = 1 V, 10 = 5mA 70 - 140 -
Reverse Transfer VCB = 1 V, IE = 0, f = 1 MHz
Capacitance Cre (Note) - 0.25 0.7 pF
(Note) .' Cre is measured by 3 terminal method with capacitance bridge.
CAUTION
This device electrostatic sensitivity. Please handle with caution.
2000-09-11 2/2
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