MT3S04AT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmL05l , 1.2:0.05 IPhhmhh C Shir.C ShirI .Ft-c StSCh I = -flMAXIMUM RATINGS (T ..
MT3S05T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSApplications Unit: mm Sutable for use in an OSC Low noise figure NF = 1.4dB Excellent co ..
MT3S06S ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmT .nw Nni m: Fi m1 ret0'=1%dTt1.6:02Whm=3V,In=3mA,f= 2GHz)0.8:.t0.1F—T—fl ~3| ..
MT3S06T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmL05l , 1.2:0.05 Il 0.8 i 0.05221C0 T.nw Nnign Fianna . NF = 1 RAR I(Vnm=3V, ..
MT3S06T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSMT3506TTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TMTRQDETVHF-UHF BAND LOW NOISE AMPLIFIER
MT3S06U ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmZ1IU1O T.nw Nnign Fianna . NF = 1 RAR “1.25:0.1”(Vnm=3V, In=3mA, f-- 2GHz)TT ..
MX29LV161TTC-90 , 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ABTC-70 , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ABTC-70 , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ABTC-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ABTC-70G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV320ABTC-90G , 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MT3S04AT
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSH I BA MT3SO4AT
TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm
'fil, 1.2t0.05
0 Low Noise Figure : NF = 1.2 dB (at f-- 1 GHz) Q "Mj
o High Gain : Gain = 12.5 dB (at f = 1 GHz) - oc:,',,''
_|_I; I g
to - Q 1 o"
MAXIMUM RATINGS (Ta = 25°C) g. 3 o' - }
CHARACTERISTIC SYMBOL RATING UNIT ct o E 3
Collector-Base Voltage VCBO 10 V 'g-
Collector-Emitter Voltage VCEO 5 V
Emitter-Base Voltage VEBO 2 V g g!
Collector Current IC 40 mA 3 E
Base Current IB 10 mA g l o
Collector Power Dissipation PC 100 mW
Junction Temperature Tj 125 "C
Ct 1. BASE
Storage Temperature Range Tstg -55--125 C 2. EMITTER
3. COLLECTOR
MARKING
3 JEDEC -
|_I EIAJ -
A E TOSHIBA 2-IBIA
Ll Ll Weight : 0.0022 g
MICROWAVE CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
... fT(1) VCE=1V,IC=5mA 2 5 -
Transition Frequency fT (2) VCE = 3 V, IC = 7 mA 5 7 - GHz
V = 1 V, I = 5mA,
IS21el2(1) ng1GHz C - 9.5 -
Insertion Gain IS F(2) VCE = 3V, 1C = 20 mA, 7 5 12 5 dB
21e f = 1 GHz . . -
NF (1) 2t 21:2“ IC = 5mA, - 1.3 2.2
Noise Figure NF(2) VCE = 3V, 1C = 7mA, 1 2 2 dB
f = 1 GHz - .
000707EAA2
O TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction
or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizin TOSHIBA
products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or
failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your desi ns, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent
TOSHIBA products speci ications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor
Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
o The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office
equipment, measuring1 equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for
usage in equipment t at requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury ("Unintended Usage"). Unintended Usage include atomic ener y control instruments, airplane or spaceship instruments, transportation
instruments, traffic signal instruments, combustion control instruments, me ical instruments, all types of safety devices, etc.. Unintended Usage of
TOSHIBA products listed in this document shall be made at the customer's own risk.
0 The information contained herein is presented only as a guide for the apflications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third parties which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o The information contained herein is subject to change without notice.
2000-09-11 1/4
TOSH I BA MT3SO4AT
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 5V, IE = 0 - - 0.1 PA
Emitter Cut-off Current IEBO VEB = 1 V, 10 = O - - 1 PA
DC Current Gain hFE VCE = 1 V, IC = 5mA 80 - 160 -
Reverse Transfer VCB = 1 V, IE = 0, f = 1 MHz
- . 1.1 F
Capacitance Cre (Note) 0 8 5 p
(Note) : ore is measured by 3 terminal method with capacitance bridge.
CAUTION
This device electrostatic sensitivity. Please handle with caution.
2000-09-1 1 2/4
TOSH I BA MT3SO4AT
IS21el2 - IC |821el2 - VCE
INSERTION GAIN [sml2 (dB)
INSERTION GAIN :32”? (dB)
f = 1 GHz
Ta = 25°C
1 3 5 10 30 50 100 0 2 4 6 8 10
COLLECTOR CURRENT 1C (mA) c0LLEcT0R-EMITTER VOLTAGE VCE (V)
Cre - VCB fT - IC
f = 1 GHz
Ta = 25°C
Cre (pF)
REVERSE TRANSFER CAPACITANCE
TRANSITION FREQUENCY fT (GHz)
o 2 4 6 8 10 1 3 5 10 30 50 100
COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT IC (mA)
NF - IC Pin - Pout
f=lGHz
T =2 TF
a SC E 10
b) 4 -20
1 3 5 10 30 50 100 -40 -30 -20 -10 o 10 20
COLLECTOR CURRENT IC (mA) INPUT LEVEL Pin (dBmW)
2000-09-11 3/4
TOSH I BA MT3SO4AT
MT3SO4AT
VCE =1V, k: = 5mA, f =100--2000MHz Step 100MHz
frequency S11 S21 S12 S22 [821]2
(MHz) Mag. Ang. (°) Mag. Ang. (°) Mag. Ang. (°) Mag. Ang. (°) (dB)
100 0.816 -48.89 13.75 149.67 0.049 64.97 0.852 -30.42 22.76
200 0.686 -85.00 10.54 128.17 0.076 51.20 0.653 -51.66 20.45
300 0.610 - 109.35 8.12 115.66 0.090 45.33 0.505 -64.15 18.20
400 0.559 - 126.76 6.48 107.22 0.098 43.17 0.405 -73.06 16.23
500 0.526 - 139.44 5.37 100.75 0.105 43.43 0.339 -79.36 14.60
600 0.516 - 149.53 4.56 96.01 0.111 44.45 0.293 -84.60 13.18
700 0.501 - 157.99 3.98 92.10 0.118 45.80 0.261 -88.72 12.00
800 0.493 - 165.14 3.54 88.53 0.124 47.29 0.236 -91.79 10.98
900 0.486 - 171.28 3.20 85.67 0.131 49.22 0.217 -94.32 10.09
1000 0.490 - 176.87 2.90 82.78 0.139 51.08 0.201 -97.21 9.24
1100 0.484 178.22 2.66 80.10 0.146 52.49 0.190 -99.41 8.51
1200 0.484 174.28 2.49 77.64 0.155 54.22 0.181 - 101.16 7.91
1300 0.480 170.08 2.33 75.44 0.164 55.64 0.174 - 103.20 7.35
1400 0.473 166.43 2.19 72.97 0.173 56.93 0.167 - 103.80 6.82
1500 0.473 162.63 2.06 70.84 0.182 57.73 0.166 - 104.40 6.27
1600 0.469 158.99 1.97 68.89 0.192 59.02 0.160 - 105.95 5.88
1700 0.473 155.89 1.89 67.16 0.203 59.92 0.158 - 107.11 5.53
1800 0.464 152.54 1.81 65.21 0.215 60.32 0.161 - 107.08 5.15
1900 0.463 149.55 1.74 63.48 0.226 60.67 0.161 - 107.22 4.83
2000 0.464 146.87 1.68 61.59 0.238 60.90 0.162 - 108.95 4.53
VCE=2V, lc=20mA, f=100-2000MHz Step 100MHz
frequency S11 S21 S12 S22 ls21l2
(MHz) Mag. Ang. (°) Mag. Ang. (°) Mag. Ang. (°) Mag. Ang. (°) (dB)
100 0.536 -90.31 29.46 129.33 0.029 59.49 0.596 -59.40 29.39
200 0.462 - 130.75 17.64 110.31 0.042 58.05 0.370 - 86.77 24.93
300 0.445 - 149.81 12.32 102.15 0.053 61.13 0.268 - 102.96 21.81
400 0.433 - 161.41 9.41 97.08 0.064 64.57 0.215 - 116.12 19.47
500 0.427 - 169.45 7.64 93.09 0.076 67.06 0.183 - 126.70 17.66
600 0.427 - 176.63 6.40 90.18 0.089 68.69 0.164 - 135.72 16.12
700 0.423 177.97 5.53 87.75 0.101 69.89 0.150 - 143.08 14.86
800 0.422 173.10 4.88 85.47 0.114 70.55 0.138 - 149.03 13.77
900 0.418 168.35 4.39 83.32 0.127 70.97 0.129 - 154.68 12.85
1000 0.425 164.00 3.97 81.32 0.141 71.09 0.121 - 160.16 11.97
1100 0.419 160.48 3.64 79.52 0.154 71.23 0.113 - 164.23 11.21
1200 0.411 157.05 3.38 77.68 0.168 71.16 0.106 - 168.21 10.59
1300 0.409 154.44 3.15 76.21 0.181 71.02 0.100 - 171.05 9.96
1400 0.404 150.35 2.96 74.27 0.195 70.62 0.091 - 173.86 9.44
1500 0.404 147.01 2.80 72.39 0.209 70.10 0.084 - 175.05 8.93
1600 0.398 143.59 2.65 70.94 0.223 69.74 0.077 - 178.11 8.46
1700 0.392 140.49 2.53 69.29 0.238 69.22 0.071 - 178.40 8.05
1800 0.390 137.58 2.44 67.83 0.252 68.32 0.064 - 173.59 7.74
1900 0.382 134.91 2.31 66.00 0.266 67.50 0.058 - 169.49 7.28
2000 0.375 132.78 2.24 64.34 0.280 66.58 0.055 - 168.62 7.02
2000-09-1 1 4/4
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