MSP430F436IPN ,16-Bit Ultra-Low-Power Microcontroller, 24kB Flash, 1024B RAM, 12-Bit ADC, USART, 160 Segment LCDMSP430x43x1, MSP430x43x, MSP430x44x1, MSP430x44xMIXED SIGNAL MICROCONTROLLERSLAS344G − JANUARY 2002 ..
MSP430F436IPNR ,16-Bit Ultra-Low-Power Microcontroller, 24kB Flash, 1024B RAM, 12-Bit ADC, USART, 160 Segment LCDMSP430x43x1, MSP430x43x, MSP430x44x1, MSP430x44xMIXED SIGNAL MICROCONTROLLERSLAS344G − JANUARY 2002 ..
MSP430F436IPZ ,16-Bit Ultra-Low-Power Microcontroller, 24kB Flash, 1024B RAM, 12-Bit ADC, USART, 160 Segment LCD.‡Package drawings, thermal data, and symbolization are available at
MSP430F4371IPN ,16-Bit Ultra-Low-Power Microcontroller, 32kB Flash, 1024B RAM, USART, 160 Segment LCD 80-LQFP -40 to 85MSP430x43x1, MSP430x43x, MSP430x44x1, MSP430x44xMIXED SIGNAL MICROCONTROLLERSLAS344G − JANUARY 2002 ..
MSP430F4371IPZR ,16-Bit Ultra-Low-Power Microcontroller, 32kB Flash, 1024B RAM, USART, 160 Segment LCD 100-LQFP -40 to 85.‡Package drawings, thermal data, and symbolization are available at
MSP430F437IPN ,16-Bit Ultra-Low-Power Microcontroller, 32kB Flash, 1024B RAM, 12-Bit ADC, USART, 160 Segment LCDMSP430x43x1, MSP430x43x, MSP430x44x1, MSP430x44xMIXED SIGNAL MICROCONTROLLERSLAS344G − JANUARY 2002 ..
MURS360T3 ,Ultra Fast Rectifier (less than 100ns)THERMAL CHARACTERISTICSThermal Resistance, Junction to Lead R 11 °C/WθJL
MURS360T3G ,Surface Mount Ultrafast Power RectifiersELECTRICAL CHARACTERISTICSMaximum Instantaneous Forward Voltage (Note 1) v VF(i = 3.0 A, T = 25°C) ..
MUX08 ,8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected)FEATURES
JFET Switches Rather Than CMOS
Low "ON" Resistance ...................... 220n Typ
..
MUX08EP ,8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected)CHARACTERISTICS at V+ = +15V, V- =
Analog Input Voltage ....... v- Supply -20Vto V+ Supply +20V
..
MUX08FQ ,8-Chan/dual 4-Chan JFET Analog Multiplexers(Overvoltage & Power Supply loss Protected)
MUX08FS ,8-Chan/dual 4-Chan JFET Analog Multiplexers(Overvoltage & Power Supply loss Protected)
MSP430F436IPN-MSP430F436IPNR-MSP430F436IPZ
16-Bit Ultra-Low-Power Microcontroller, 24kB Flash, 1024B RAM, 12-Bit ADC, USART, 160 Segment LCD
Five Power Saving Modes Wake-Up From Standby Mode in Less Than 6 µs 16-Bit RISC Architecture,
125-ns Instruction Cycle Time 12-Bit A/D Converter With Internal
Reference, Sample-and-Hold and
Autoscan Feature 16-Bit Timer_B With Three† or Seven‡
Capture/Compare-With-Shadow Registers 16-Bit Timer_A With Three
Capture/Compare Registers On-Chip Comparator Serial Communication Interface (USART),
Select Asynchronous UART or
Synchronous SPI by Software:
− Two USARTs (USART0, USART1)†
− One USART (USART0)‡ Brownout Detector Supply Voltage Supervisor/Monitor With
Programmable Level Detection Serial Onboard Programming,
No External Programming Voltage Needed
Programmable Code Protection by Security
Fuse
16KB+256B Flash Memory,
512B RAM
− MSP430F436, MSP430F4361§
:
24KB+256B Flash Memory,
1KB RAM
− MSP430F437, MSP430F4371§
:
32KB+256B Flash Memory,
1KB RAM
− MSP430F447:
32KB+256B Flash Memory,
1KB RAM
− MSP430F448, MSP430F4481§
:
48KB+256B Flash Memory,
2KB RAM
− MSP430F449, MSP430F4491§
:
60KB+256B Flash Memory,
2KB RAM For Complete Module Descriptions, See
The MSP430x4xx Family User’s Guide,
Literature Number SLAU056 MSP430F43x, and MSP430F43x1 devices MSP430F44x, and MSP430F44x1 devices The MSP430F43x1 and MSP430F44x1 devices are identical to
the MSP430F43x and MSP430F44x devices, respectively − with
the exception that the ADC12 module is not implemented.
descriptionThe Texas Instruments MSP430 family of ultralow power microcontrollers consists of several devices featuring
different sets of peripherals targeted for various applications. The architecture, combined with five low-power
modes, is optimized to achieve extended battery life in portable measurement applications. The devices feature
a powerful 16-bit RISC CPU, 16-bit registers, and constant generators that contribute to maximum code
efficiency. The digitally controlled oscillator (DCO) allows wake-up from low-power modes to active mode in less
than 6 µs.
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range
from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage
because very small parametric changes could cause the device not to meet its published specifications. These devices have limited
built-in ESD protection.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
