MSD6100 ,Small Signal Dual Switch Diode
MSD6100RLRA ,Small Signal Dual Switch Diodehttp://onsemi.com2I , FORWARD CURRENT (mA)FC , DIODE CAPACITANCE (pF)DI , REVERSE CURRENTμ (A)RMSD6 ..
MSD6150 ,Dual Switching Diode Common AnodeMaximum Ratings as follows: P = 1.0 W @ T = 25°C,D CDerate above 8.0 mW/°C, P = 10 W @ T = 25°C, De ..
MSD6150 ,Dual Switching Diode Common Anode
MSG33002 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
MSK5232-1.8HTD , HIGH CURRENT, LOW DROPOUT SURFACE MOUNT VOLTAGE REGULATORS
MT4S03A ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2..0n0 Low Noise : Figure : NF = 1.4 dB0 High Gain : Gain = 9 dB (f = 2 GHz) ..
MT4S03AU ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2.1 i0.1Low Noise : Figure : NF = 1.4 dBHigh Gain : Gain = 9 dB (f = 2 GHz)1 ..
MT4S03BU ,Radio-frequency bipolar transistorElectrical Characteristics (Ta = 25°C) Characteristic Symbol Condition Min Typ. MaxUnitCollector cu ..
MT4S06 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2..0n(Vnm=3V, In=3mA, f-- 2GHz)I g e,retrrilr--i-'ti';lTThrh (19inV“ "' -I2= ..
MT4S06U ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2.1 i0.1O T.nw Nnign Fianna . NF = 1 RAR l Ac-?-!-'-'--?-; I(Vnm=3V, In=3mA, ..
MT4S100T ,TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE UHF LOW NOISE AMPLIFIER APPLICATIONFEATURES 1.2±0.05 Low Noise Figure :NF=0.72dB (@f=2GHz) 0.9±0.052 High Gain:|S21e| =17.0dB (@f= ..
MSD6100
Small Signal Dual Switch Diode
