MSD602-RT1 ,NPN General Purpose Amplifier Transistor Surface MountMAXIMUM RATINGS (T = 25°C)ARating Symbol Value Unit CASE 318D–03, STYLE 1SC–59Collector–Base Voltag ..
MSD602-RT1G , NPN General Purpose Amplifier Transistor Surface Mount
MSD602-RT2 ,General Purpose Amplifier Transistor NPNMAXIMUM RATINGS (T = 25°C)ARating Symbol Value Unit CASE 318D–03, STYLE 1SC–59Collector–Base Voltag ..
MSD6100 ,Small Signal Dual Switch Diode
MSD6100RLRA ,Small Signal Dual Switch Diodehttp://onsemi.com2I , FORWARD CURRENT (mA)FC , DIODE CAPACITANCE (pF)DI , REVERSE CURRENTμ (A)RMSD6 ..
MSD6150 ,Dual Switching Diode Common AnodeMaximum Ratings as follows: P = 1.0 W @ T = 25°C,D CDerate above 8.0 mW/°C, P = 10 W @ T = 25°C, De ..
MT4LC8M8E1TG-5 , DRAM
MT4LC8M8E1TG-5 , DRAM
MT4LC8M8P4DJ-5 , DRAM
MT4LC8M8P4TG-5 , DRAM
MT4S03A ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2..0n0 Low Noise : Figure : NF = 1.4 dB0 High Gain : Gain = 9 dB (f = 2 GHz) ..
MT4S03AU ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2.1 i0.1Low Noise : Figure : NF = 1.4 dBHigh Gain : Gain = 9 dB (f = 2 GHz)1 ..
MSD602-RT1
NPN General Purpose Amplifier Transistor Surface Mount
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MAXIMUM RATINGS (TA = 25°C)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C)1. Pulse Test: Pulse Width ≤ 300 μs, D.C. ≤ 2%.
DEVICE MARKINGThe “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.COLLECTOR
BASE
EMITTER
