MSD601-RT1 ,NPN General Purpose Amplifier Transistors Surface MountELECTRICAL CHARACTERISTICS (T = 25°C)A3Characteristic Symbol Min Max Unit2Collector–Emitter Breakdo ..
MSD601-RT1 ,NPN General Purpose Amplifier Transistors Surface Mount**Order this documentSEMICONDUCTOR TECHNICAL DATAby MSD601–RT1/D * * * * **COLLECTOR*3*Motorola Pr ..
MSD601-RT1G ,Small Signal Plastic NPNMAXIMUM RATINGS (T = 25°C)ARating Symbol Value UnitSC–59 PACKAGE SINGLE SILICONCollector–Base Volta ..
MSD601-RT2 ,General Purpose Amplifier Transistor NPNMAXIMUM RATINGS (T = 25°C) 2A1Rating Symbol Value UnitCollector–Base Voltage V 60 Vdc(BR)CBOCASE 31 ..
MSD601-S ,NPN General Purpose Amplifier Transistors Surface MountTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitPower Dissipation P 200 mWDJunction Temperatur ..
MSD601-ST1 ,NPN General Purpose Amplifier Transistors Surface MountMSD601-RT1, MSD601-ST1Preferred Device NPN General PurposeAmplifier TransistorsSurface Mount
MT4LC8M8E1TG-5 , DRAM
MT4LC8M8E1TG-5 , DRAM
MT4LC8M8P4DJ-5 , DRAM
MT4LC8M8P4TG-5 , DRAM
MT4S03A ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2..0n0 Low Noise : Figure : NF = 1.4 dB0 High Gain : Gain = 9 dB (f = 2 GHz) ..
MT4S03AU ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2.1 i0.1Low Noise : Figure : NF = 1.4 dBHigh Gain : Gain = 9 dB (f = 2 GHz)1 ..
MSD601R-MSD601-R-MSD601-RT1-MSD601-RT1G-MSD601-S-MSD601-ST1
Small Signal Plastic NPN
MSD601-RT1, MSD601-ST1
Preferred Device NPN General Purpose
Amplifier T ransistors
Surface Mount
MAXIMUM RATINGS (TA = 25°C)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C) Pulse Test: Pulse Width ≤ 300 �s, D.C. ≤ 2%.
