MSD601-RT2 ,General Purpose Amplifier Transistor NPNMAXIMUM RATINGS (T = 25°C) 2A1Rating Symbol Value UnitCollector–Base Voltage V 60 Vdc(BR)CBOCASE 31 ..
MSD601-S ,NPN General Purpose Amplifier Transistors Surface MountTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitPower Dissipation P 200 mWDJunction Temperatur ..
MSD601-ST1 ,NPN General Purpose Amplifier Transistors Surface MountMSD601-RT1, MSD601-ST1Preferred Device NPN General PurposeAmplifier TransistorsSurface Mount
MSD602 ,Tech Electronics LTD - NPN General Purpose Amplifier Transistor Surface Mount
MSD602-RT1 ,NPN General Purpose Amplifier Transistor Surface MountMAXIMUM RATINGS (T = 25°C)ARating Symbol Value Unit CASE 318D–03, STYLE 1SC–59Collector–Base Voltag ..
MSD602-RT1G , NPN General Purpose Amplifier Transistor Surface Mount
MT4LC8M8E1TG-5 , DRAM
MT4LC8M8E1TG-5 , DRAM
MT4LC8M8P4DJ-5 , DRAM
MT4LC8M8P4TG-5 , DRAM
MT4S03A ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2..0n0 Low Noise : Figure : NF = 1.4 dB0 High Gain : Gain = 9 dB (f = 2 GHz) ..
MT4S03AU ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsAPPLICATIONS Unit in mm2.1 i0.1Low Noise : Figure : NF = 1.4 dBHigh Gain : Gain = 9 dB (f = 2 GHz)1 ..
MSD601-RT2
General Purpose Amplifier Transistor NPN
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MAXIMUM RATINGS (TA = 25°C)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C)1. Pulse Test: Pulse Width ≤ 300 μs, D.C. ≤ 2%.
DEVICE MARKINGThe “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
COLLECTOR
BASE
EMITTER
