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MSD1328-RT1 |MSD1328RT1MOTN/a3000avaiNPN Low Voltage Output Amplifiers-Surface Mount


MSD1328-RT1 ,NPN Low Voltage Output Amplifiers-Surface MountMAXIMUM RATINGS (T = 25°C)ARating Symbol Value UnitCollector−Base Voltage V 25 V(BR)CBOCollector−Em ..
MSD1328-RT1 ,NPN Low Voltage Output Amplifiers-Surface MountMAXIMUM RATINGS (T = 25°C)ACASE 318D–03, STYLE 1Rating Symbol Value UnitSC–59Collector–Base Voltage ..
MSD1328-ST1 ,NPN Low Voltage Output Amplifiers-Surface MountTHERMAL CHARACTERISTICS3Characteristic Symbol Max Unit21Power Dissipation P 200 mWDJunction Tempera ..
MSD1819A-RT1 ,General Purpose Amplifier Transistorhttp://onsemi.com3C , INPUT CAPACITANCE (pF)ibCOLLECTOR VOLTAGE (mV)C , CAPACITANCE (pF)obMSD1819A– ..
MSD1819A-RT1 ,General Purpose Amplifier Transistor**Order this documentSEMICONDUCTOR TECHNICAL DATAby MSD1819A–RT1/D * * * *This NPN Silicon Epitaxia ..
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MSD1328-RT1
NPN Low Voltage Output Amplifier Surface Mount
- -MAXIMUM RATINGS (TA = 25°C)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C)

1. Pulse Test: Pulse Width ≤ 300 μs, D.C. ≤ 2%.
DEVICE MARKING

The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
COLLECTOR
BASE
EMITTER
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