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MSB709-RT2 |MSB709RT2ONN/a3000avaiGeneral Purpose Amplifier Transistor PNP
MSB709-RT2 |MSB709RT2MOTN/a17420avaiGeneral Purpose Amplifier Transistor PNP


MSB709-RT2 ,General Purpose Amplifier Transistor PNP**Order this documentSEMICONDUCTOR TECHNICAL DATAby MSB709–RT1/D * * * * * **Motorola Preferred Dev ..
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MSB709-RT2
General Purpose Amplifier Transistor PNP
- -MAXIMUM RATINGS (TA = 25°C)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C)

1. Pulse Test: Pulse Width ≤ 300 μs, D.C. ≤ 2%.
DEVICE MARKING

The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
COLLECTOR
BASE
EMITTER
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