MSB709-RT1 ,PNP General Purpose Amplifier Transistor Surface MountTHERMAL CHARACTERISTICSBASE EMITTERCharacteristic Symbol Max UnitPower Dissipation P 200 mWD3Juncti ..
MSB709-RT1 ,PNP General Purpose Amplifier Transistor Surface MountMAXIMUM RATINGS (T = 25°C)ASC–59Rating Symbol Value UnitCollector–Base Voltage V –60 Vdc(BR)CBOColl ..
MSB709-RT1 ,PNP General Purpose Amplifier Transistor Surface Mount**Order this documentSEMICONDUCTOR TECHNICAL DATAby MSB709–RT1/D * * * * * **Motorola Preferred Dev ..
MSB709-RT1G ,Small Signal Plastic PNPELECTRICAL CHARACTERISTICS (T = 25°C)SUFFIXACASE 318DCharacteristic Symbol Min Max UnitCollector–Em ..
MSB709-RT2 ,General Purpose Amplifier Transistor PNP**Order this documentSEMICONDUCTOR TECHNICAL DATAby MSB709–RT1/D * * * * * **Motorola Preferred Dev ..
MSB709-RT2 ,General Purpose Amplifier Transistor PNPMAXIMUM RATINGS (T = 25°C)ASC–59Rating Symbol Value UnitCollector–Base Voltage V –60 Vdc(BR)CBOColl ..
MT48LC4M32B2 , 128Mb: x32 SDRAM MT48LC4M32B2 – 1 Meg x 32 x 4 Banks
MT48LC4M32B2 , 128Mb: x32 SDRAM MT48LC4M32B2 – 1 Meg x 32 x 4 Banks
MT48LC4M32B2B5-6G , 128Mb: x32 SDRAM MT48LC4M32B2 – 1 Meg x 32 x 4 Banks
MT48LC8M16A2TG-6A , SYNCHRONOUS DRAM
MT48LC8M16A2TG-6A , SYNCHRONOUS DRAM
MT48LC8M16A2TG-6A , SYNCHRONOUS DRAM
MSB709-RT1
PNP General Purpose Amplifier Transistor Surface Mount
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MAXIMUM RATINGS (TA = 25°C)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C)1. Pulse Test: Pulse Width ≤ 300 μs, D.C. ≤ 2%.
DEVICE MARKINGThe “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
COLLECTOR
BASE
EMITTER
