MSB1218A-RT1 ,PNP Silicon General Purpose Amplifier Transistor**Order this documentSEMICONDUCTOR TECHNICAL DATAby MSB1218A–RT1/D * * * *This PNP Silicon Epitaxia ..
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MSB1218A-RT1
PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
--This PNP Silicon Epitaxial Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC–70/SOT–323 package
which is designed for low power surface mount applications. High hFE, 210–460 Low VCE(sat), < 0.5 V Available in 8 mm, 7–inch/3000 Unit T ape and Reel
MAXIMUM RATINGS (TA = 25°C)
DEVICE MARKING
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint. Pulse Test: Pulse Width ≤ 300 μs, D.C. ≤ 2%.
Thermal Clad is a trademark of the Bergquist Company
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