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MRFG35010MT1
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
The RF GaAs LineGallium Arsenide PHEMT
RF Power Field Effect TransistorDesigned for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications. Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,
IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power 900 mW
Power Gain 10 dBEfficiency 28% 9 Watts P1dB @ 3.55 GHz Excellent Phase Linearity and Group Delay Characteristics High Gain, High Efficiency and High Linearity In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
MOISTURE SENSITIVITY LEVEL(1) For reliable operation, the operating channel temperature should not exceed 150°C.
(2) Simulated.
