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MRFG35010
MRFG35010 3.5 GHz, 10 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line������� �������� �����
RF Power Field Effect TransistorDesigned for WLL/MMDS or UMTS driver applications with frequencies from
1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or
Class A linear base station applications. Typical W–CDMA Performance: –42 dBc ACPR, 3.55 GHz, 12 Volts,
IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 1 Watt
Power Gain — 10 dB
Efficiency — 30% 10 Watts P1dB @ 3.55 GHz Excellent Phase Linearity and Group Delay Characteristics High Gain, High Efficiency and High Linearity
MAXIMUM RATINGS
THERMAL CHARACTERISTICS(1) For reliable operation, the operating channel temperature should not exceed 150°C.
