MRF9811T1 ,HIGH FREQUENCY GaAs FET TRANSISTOR**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF9811T1/D* **The RF Small Signal Line* **N–Ch ..
MRFE6S9125NBR1 , N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9200HR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9200HR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9205HR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRFG35003M6T1 ,MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRFG350 ..
MT3S04AFS , VHF~UHF Band Low-Noise Amplifier Applications
MT3S04AT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmL05l , 1.2:0.05 IPhhmhh C Shir.C ShirI .Ft-c StSCh I = -flMAXIMUM RATINGS (T ..
MT3S05T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSApplications Unit: mm Sutable for use in an OSC Low noise figure NF = 1.4dB Excellent co ..
MT3S06S ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmT .nw Nni m: Fi m1 ret0'=1%dTt1.6:02Whm=3V,In=3mA,f= 2GHz)0.8:.t0.1F—T—fl ~3| ..
MT3S06T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmL05l , 1.2:0.05 Il 0.8 i 0.05221C0 T.nw Nnign Fianna . NF = 1 RAR I(Vnm=3V, ..
MT3S06T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSMT3506TTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TMTRQDETVHF-UHF BAND LOW NOISE AMPLIFIER
MRF9811T1
HIGH FREQUENCY GaAs FET TRANSISTOR
-
The RF Small Signal Line-
N–Channel Depletion–Mode MESFETDesigned for use in driver stages of moderate power RF amplifiers to 2 GHz.
Typical applications are cellular radios and personal communication
transmitters such as AMPS, ETACS, NMT, GSM, PCN, JDC and DECT. Performance Specifications at 900 MHz, 5.8 V:
Output Power = 21 dBm
Power Gain = 14 dB Min
Drain Efficiency = 55% Min Plastic Surface Mount Package Order MRF9811T1 for Tape and Reel Packaging.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Order this document
by MRF9811T1/D-
SEMICONDUCTOR TECHNICAL DATA
