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MT3S04AT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mmL05l , 1.2:0.05 IPhhmhh C Shir.C ShirI .Ft-c StSCh I = -flMAXIMUM RATINGS (T ..
MT3S05T ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSApplications Unit: mm Sutable for use in an OSC Low noise figure NF = 1.4dB Excellent co ..
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MRF9745T1
HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
-
The RF Small Signal Line -
N–Channel Enhancement–Mode MOSFETDesigned for use in low voltage, moderate power amplifiers such as portable
analog and digital cellular radios and PC RF modems. Performance Specifications at 5.8 V, 900 MHz:
Output Power = 30 dBm Min
Power Gain = 10 dB Typ
Efficiency = 50% Min Guaranteed Ruggedness at Load VSWR = 20:1 New Plastic Surface Mount Package Available in Tape and Reel Packaging.
T1 Suffix = 1,000 Units per 8 mm, 7 inch Reel Device Marking = 9745
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Order this document
by MRF9745T1/D-
SEMICONDUCTOR TECHNICAL DATA