MRF9180 ,MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9180/DThe RF Sub–Micron MOSFET Line ..
MRF9210 ,MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFETTHERMAL CHARACTERISTICSCharacteristic Symbol Value (1) UnitThermal Resistance, Junction to Case R 0 ..
MRF9210R3 ,880 MHz, 200 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
MRF927T1 ,LOW NOISE HIGH FREQUENCY TRANSISTOR**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF927T1/DThe RF Small Signal Line** * **$ **"$ ..
MRF9411LT1 ,NPN Silicon Low Noise, High-Frequency TransistorsMAXIMUM RATINGSRating Symbol MMBR941LT1, T3 MRF9411LT1 MRF947 Series UnitCollector–Emitter Voltage ..
MRF9411LT1 ,NPN Silicon Low Noise, High-Frequency Transistorsfeatures excellent broadband linearity and is offered in a variety of packages.• Fully Implanted Ba ..
MT35212AE , BELL 212A/CCITT V.22 Modem Filter
MT3530BE , BELL 103/V.21 SINGLE CHIP MODEM
MT3530BE , BELL 103/V.21 SINGLE CHIP MODEM
MT3S03AFS , VHF~UHF Band Low-Noise Amplifier Applications
MT3S03AT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSMT3SO3ATTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TVHF-UHF BAND LOW NOISE AMPLIFIER APPLICATI ..
MT3S04AFS , VHF~UHF Band Low-Noise Amplifier Applications
MRF9180
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs
The RF Sub–Micron MOSFET Line�� ����� ����� ������ � ����������
N–Channel Enhancement–Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment. Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 � 700 mA
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 40 Watts
Power Gain — 17 dB
Efficiency — 26%
Adjacent Channel Power –
750 kHz: –45.0 dBc @ 30 kHz BW
1.98 MHz: –60.0 dBc @ 30 kHz BW Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts (CW)
Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
