MRF9135L ,MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9135L/DThe RF Sub–Micron MOSFET Line ..
MRF9135L ,MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF917T1 ,LOW NOISE HIGH FREQUENCY TRANSISTOR**Order this documentSEMICONDUCTOR TECHNICAL DATAfrom RF MarketingThe RF Small Signal Line** ** * * ..
MRF9180 ,MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9180/DThe RF Sub–Micron MOSFET Line ..
MRF9210 ,MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFETTHERMAL CHARACTERISTICSCharacteristic Symbol Value (1) UnitThermal Resistance, Junction to Case R 0 ..
MRF9210R3 ,880 MHz, 200 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
MT35212AE , BELL 212A/CCITT V.22 Modem Filter
MT3530BE , BELL 103/V.21 SINGLE CHIP MODEM
MT3530BE , BELL 103/V.21 SINGLE CHIP MODEM
MT3S03AFS , VHF~UHF Band Low-Noise Amplifier Applications
MT3S03AT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSMT3SO3ATTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TVHF-UHF BAND LOW NOISE AMPLIFIER APPLICATI ..
MT3S04AFS , VHF~UHF Band Low-Noise Amplifier Applications
MRF9135L
MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETs
The RF Sub–Micron MOSFET Line�� ����� ����� ������ � ����������
N–Channel Enhancement–Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment. Typical N–CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1100 mA
IS–95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 25 Watts Avg.
Power Gain — 17.8 dB
Efficiency — 25%
Adjacent Channel Power —
750 kHz: –47 dBc @ 30 kHz BW Internally Matched, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 Watts CW
Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
