MRF9120 ,MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9120/DThe RF MOSFET Line ..
MRF9120 ,MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF9130L ,MRF9130L, MRF9130LR3, MRF9130LSR3 GSM/EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9130L/DThe RF Sub–Micron MOSFET Line ..
MRF9130L ,MRF9130L, MRF9130LR3, MRF9130LSR3 GSM/EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF9135L ,MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.6 °C/ ..
MRF9135L ,MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9135L/DThe RF Sub–Micron MOSFET Line ..
MT35212AE , BELL 212A/CCITT V.22 Modem Filter
MT3530BE , BELL 103/V.21 SINGLE CHIP MODEM
MT3530BE , BELL 103/V.21 SINGLE CHIP MODEM
MT3S03AFS , VHF~UHF Band Low-Noise Amplifier Applications
MT3S03AT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSMT3SO3ATTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TVHF-UHF BAND LOW NOISE AMPLIFIER APPLICATI ..
MT3S04AFS , VHF~UHF Band Low-Noise Amplifier Applications
MRF9120
MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line�� ����� ����� ������ � ����������
N–Channel Enhancement–Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications with frequen-
cies from 865 to 895 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applications
in 26 volt base station equipment. Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 500 mA
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 26 Watts
Power Gain — 16 dB
Efficiency — 26%
Adjacent Channel Power —
750 kHz: –45 dBc @ 30 kHz BW
1.98 MHz: –60 dBc @ 30 kHz BW Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts (CW)
Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
