MRF9085LSR3 ,880 MHz, 90 W, 26 V Lateral N–Channel RF Power MOSFET MOTOROLA Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF9085 ..
MRF9100 ,MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9100/DThe RF MOSFET Line ..
MRF9120 ,MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9120/DThe RF MOSFET Line ..
MRF9120 ,MRF9120, MRF9120S 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF9130L ,MRF9130L, MRF9130LR3, MRF9130LSR3 GSM/EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9130L/DThe RF Sub–Micron MOSFET Line ..
MRF9130L ,MRF9130L, MRF9130LR3, MRF9130LSR3 GSM/EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MT35212AE , BELL 212A/CCITT V.22 Modem Filter
MT3530BE , BELL 103/V.21 SINGLE CHIP MODEM
MT3530BE , BELL 103/V.21 SINGLE CHIP MODEM
MT3S03AFS , VHF~UHF Band Low-Noise Amplifier Applications
MT3S03AT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSMT3SO3ATTOSHIBA TRANSISTOR SILICON NPN EPlTAXIAL PLANAR TVHF-UHF BAND LOW NOISE AMPLIFIER APPLICATI ..
MT3S04AFS , VHF~UHF Band Low-Noise Amplifier Applications
MRF9085LSR3
880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
The RF Sub- Micron MOSFET LineRF Power Field Effect T ransistors
N- Channel Enhancement- Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large-signal, common-source amplifier
applications in 26 volt base station equipment. Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mAIS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13Output Power 20 WattsPower Gain 17.9 dBEfficiency 28% Adjacent Channel Power 750 kHz: -45.0 dBc @ 30 kHz BW1.98 MHz: -60.0 dBc @ 30 kHz BW Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large-Signal Impedance Parameters Low Gold Plating Thickness on Leads, 40µ″ Nominal. In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
