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MRF9085LSR3 from MOT,Motorola

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MRF9085LSR3

Manufacturer: MOT

880 MHz, 90 W, 26 V Lateral N–Channel RF Power MOSFET

Partnumber Manufacturer Quantity Availability
MRF9085LSR3 MOT 3740 In Stock

Description and Introduction

880 MHz, 90 W, 26 V Lateral N–Channel RF Power MOSFET # Introduction to the MRF9085LSR3 RF Power Transistor  

The MRF9085LSR3 is a high-performance RF power transistor designed for use in broadband applications, particularly within the L-band frequency range. This component is engineered to deliver robust power amplification, making it suitable for military, aerospace, and telecommunications systems where reliability and efficiency are critical.  

Built using advanced semiconductor technology, the MRF9085LSR3 offers excellent gain and power output, ensuring stable performance in demanding environments. Its broadband capabilities allow it to operate effectively across a wide frequency spectrum, reducing the need for multiple specialized components.  

Key features of the MRF9085LSR3 include high power density, low thermal resistance, and enhanced ruggedness, which contribute to its long-term durability. The transistor is housed in a reliable package designed to optimize heat dissipation, ensuring consistent operation even under high-power conditions.  

Common applications for the MRF9085LSR3 include radar systems, electronic warfare equipment, and communication transmitters. Its ability to handle high-power RF signals with minimal distortion makes it a preferred choice for engineers working on mission-critical systems.  

When integrating the MRF9085LSR3 into a circuit, proper thermal management and impedance matching are essential to maximize performance and longevity. Designers should refer to the datasheet for detailed specifications, including recommended operating conditions and electrical characteristics.  

Overall, the MRF9085LSR3 stands out as a dependable RF power transistor for high-frequency applications, combining efficiency, durability, and versatility.

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