MRF9030 ,MRF9030R1, MRF9030LSR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9030/DThe RF Sub–Micron MOSFET Line ..
MRF9045LR1 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF9060 ,MRF9060R1, MRF9060LSR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9060/DThe RF Sub–Micron MOSFET Line ..
MRF9080 ,MRF9080, MRF9080R3, MRF9080SR3, MRF9080LSR3 GSM 900 MHz, 75 W, 26 V Lateral N-Channel Broadband RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.7 °C/ ..
MRF9080R3 ,RF POWER FIELD EFFECT TRANSISTORSOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF9080/DThe RF Sub–Micron MOSFET Line ..
MRF9080SR3 ,RF POWER FIELD EFFECT TRANSISTORSMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V –0.5, ..
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MRF9030
MRF9030R1, MRF9030LSR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub–Micron MOSFET Line�� ����� ����� ������ � ����������
N–Channel Enhancement–Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
26 volt base station equipment. Typical Two–Tone Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 19 dB
Efficiency — 41.5%
IMD — –32.5 dBc Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
