MRF899 ,RF POWER TRANSISTOR NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF899/DThe RF Line ** *Designed for 26 Volt U ..
MRF8P18265HSR6 , RF Power Field Effect Transistors
MRF8P23080HSR3 , RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8P26080HSR3 , RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF8S7170NR3 , RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF8S9200NR3 , RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MT312C , Satellite Channel Decoder
MT3170BE , Wide Dynamic Range DTMF Receiver
MT3170BE , Wide Dynamic Range DTMF Receiver
MT35212AE , BELL 212A/CCITT V.22 Modem Filter
MT3530BE , BELL 103/V.21 SINGLE CHIP MODEM
MT3530BE , BELL 103/V.21 SINGLE CHIP MODEM
MRF899
RF POWER TRANSISTOR NPN SILICON
The RF Line- -
Designed for 26 Volt UHF large–signal, common emitter, Class AB linear
amplifier applications in industrial and commercial FM/AM equipment operating
in the range 800–960 MHz. Specified 26 Volt, 900 MHz Characteristics
Output Power = 150 Watts (PEP)
Minimum Gain = 8.0 dB @ 900 MHz, Class AB
Minimum Efficiency = 35% @ 900 MHz, 150 Watts (PEP)
Maximum Intermodulation Distortion –28 dBc @ 150 Watts (PEP) Characterized with Series Equivalent Large–Signal Parameters from 800
to 960 MHz Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, and Rated Output Power Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS(1) For information only. This part is collector matched. (continued)
Order this document
by MRF899/D-
SEMICONDUCTOR TECHNICAL DATA
