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MRF859S
NPN SILICON RF POWER TRANSISTOR
The RF Line- --
Designed for 24 Volt UHF large–signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800 to 960 MHz. Specified for VCE = 24 Vdc, IC = 0.9 Adc Characteristics
Output Power = 6.5 Watts CW
Minimum Power Gain = 11.5 dB
Minimum ITO = +47 dBm
Typical Noise Figure = 6 dB Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800 to 960 MHz Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.9 Adc and Rated Output Power Will Withstand RF Input Overdrive of 2 W CW Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration Circuit Board Photomaster Available by Ordering Document MRF859PHT/D
from Motorola Literature Distribution.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS(continued)
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