MRF8372R2 ,RF LOW POWER TRANSISTOR NPN SILICONMAXIMUM RATINGSRating Symbol Value UnitCollector–Emitter Voltage V 16 VdcCEOCollector–Base Voltage ..
MRF840 ,RF POWER TRANSISTOR NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATA by MRF840/DThe RF Line ** *. . . designed for 12 ..
MRF847 ,RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MRF857S ,NPN silicon RF power transistorELECTRICAL CHARACTERISTICSCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSCollector–Emitte ..
MRF859S ,NPN SILICON RF POWER TRANSISTOR**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF859/DThe RF Line * ** *Designed for 24 Volt ..
MRF891 ,RF POWER TRANSISTORS NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)CCharacteristic Symbol Min Typ Max Un ..
MT2-C93422 , The Best Relaytion
MT312C , Satellite Channel Decoder
MT3170BE , Wide Dynamic Range DTMF Receiver
MT3170BE , Wide Dynamic Range DTMF Receiver
MT35212AE , BELL 212A/CCITT V.22 Modem Filter
MT3530BE , BELL 103/V.21 SINGLE CHIP MODEM
MRF8372-MRF8372R2
RF LOW POWER TRANSISTOR NPN SILICON
The RF Line- --
Designed primarily for wideband large signal predriver stages in 800 MHz
and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics
Output Power = 750 mW
Minimum Gain = 8.0 dB
Efficiency 60% (Typ) State–of–the–Art Technology
Fine Line Geometry
Gold Top Metal and Wires
Silicon Nitride Passivated
Ion Implanted Arsenic Emitters Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ. Order MRF8372 in tape and reel packaging by adding suffix:
R1 suffix = 500 units per reel
R2 suffix = 2,500 units per reel
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKINGNOTE: Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MRF8372/D-
SEMICONDUCTOR TECHNICAL DATA
