MRF652S ,RF POWER TRANSISTORS NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF6S18060NBR1 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18060NBR1 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18100NR1 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19140HSR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21060NBR1 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MT29F4G08ABADAWP , 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features
MT2-C93422 , The Best Relaytion
MT312C , Satellite Channel Decoder
MT3170BE , Wide Dynamic Range DTMF Receiver
MT3170BE , Wide Dynamic Range DTMF Receiver
MT35212AE , BELL 212A/CCITT V.22 Modem Filter
MRF652S
RF POWER TRANSISTORS NPN SILICON
The RF Line- -
Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial
and commercial FM equipment operating to 512 MHz. Guaranteed 12.5 Volt, 512 MHz Characteristics
Output Power = 5.0 Watts
Minimum Gain = 10 dB
Efficiency = 65% (Typ) Typical Performance at 512 MHz, 12.5 V, 5.0 W Output = 6.0 dB Series Equivalent Large–Signal Characterization Gold Metallized, Emitter Ballasted for Long Life and Reliability Capable of 30:1 VSWR Load Mismatch at 15.5 V Supply Voltage Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS
