MRF650 ,RF POWER TRANSISTOR NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF650/DThe RF Line ** *Designed for 12.5 Volt ..
MRF652 ,RF POWER TRANSISTORS NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF652/DThe RF Line ** Designed for 12.5 Vdc U ..
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MRF6522-70 ,MRF6522-70, MRF6522-70R3 921-960 MHz, 70 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 1.1 °C/ ..
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MRF6522-70 ,MRF6522-70, MRF6522-70R3 921-960 MHz, 70 W, 26 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V ±20 Vd ..
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MRF650
RF POWER TRANSISTOR NPN SILICON
The RF Line- -
Designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 520 MHz. Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics
Output Power = 50 Watts
Minimum Gain = 5.2 dB @ 440, 470 MHz
Efficiency = 55% @ 440, 470 MHz
IRL = 10 dB Characterized with Series Equivalent Large–Signal Impedance Parameters
from 400 to 520 MHz Built–In Matching Network for Broadband Operation Triple Ion Implanted for More Consistent Characteristics Implanted Emitter Ballast Resistors Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at all Phase Angles with 20:1
VSWR @ 15.5 Vdc, 2.0 dB Overdrive Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Order this document
by MRF650/D-
SEMICONDUCTOR TECHNICAL DATA
