MRF6409 ,RF POWER TRANSISTOR NPN SILICONELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF641 ,RF POWER TRANSISTOR NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATA by MRF641/DThe RF Line ** *. . . designed for 12 ..
MRF6414 ,RF POWER TRANSISTOR NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF6414/DThe RF Line* ** *The MRF6414 is desig ..
MRF644 ,RF POWER TRANSISTOR NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATA by MRF644/DThe RF Line ** *. . . designed for 12 ..
MRF650 ,RF POWER TRANSISTOR NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF650/DThe RF Line ** *Designed for 12.5 Volt ..
MRF652 ,RF POWER TRANSISTORS NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF652/DThe RF Line ** Designed for 12.5 Vdc U ..
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MRF6409
RF POWER TRANSISTOR NPN SILICON
The RF Line- -
The MRF6409 is designed for GSM base stations applications. It incorpo-
rates high value emitter ballast resistors, gold metallizations and offers a high
degree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteristics
Output Power — 20 Watts CW
Gain — 11 dB Typ
Efficiency — 60% Typ
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
OFF CHARACTERISTICS(1) Thermal resistance is determined under specified RF operating condition.
Order this document
by MRF6409/D-
SEMICONDUCTOR TECHNICAL DATA
