MRF5S21090L ,MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Value (1,2) UnitThermal Resistance, Junction to Case R ..
MRF5S21090L ,MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs MOTOROLAFreescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5S210 ..
MRF5S21090L ,MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs MOTOROLAFreescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5S210 ..
MRF5S21090L ,MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain-Source Voltage V 65 VdcDSSGate-Source Voltage V -0.5, ..
MRF5S21100H ,MRF5S21100HR3, MRF5S21100HSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Value (1) UnitThermal Resistance, Junction to Case R ° ..
MRF5S21100H ,MRF5S21100HR3, MRF5S21100HSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs MOTOROLA Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5S21 ..
MT28F800B3WG-9B , FLASH MEMORY
MT28F800B3WG-9B , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MT29F4G08ABADAWP , 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features
MRF5S21090L
MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET LineRF Power Field Effect T ransistors
- Channel Enhancement-Mode Lateral MOSFETsDesigned for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN- PCS/cellular radio and WLL
applications. Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHzand f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probabilityon CCDF. Output Power 19 Watts Avg.Power Gain 14.5 dBEfficiency 26%IM3 -37.5 dBcACPR -40.5 dBc Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CWOutput Power Excellent Thermal Stability Characterized with Series Equivalent Large-Signal Impedance Parameters Qualified Up to a Maximum of 32 VDD Operation Available with Low Gold Plating Thickness on Leads. L Suffix Indicates40µ″ Nominal. In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
