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Partno	Mfg	Dc	Qty	Available	Descript
MRF5S19130		N/a	36	avai	MRF5S19130R3, MRF5S19130SR3 1990 MHz, 26 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
MRF5S19130	FREE/MOT	N/a	15	avai	MRF5S19130R3, MRF5S19130SR3 1990 MHz, 26 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs

MRF5S19130 ,MRF5S19130R3, MRF5S19130SR3 1990 MHz, 26 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R °C/WθJC ..
MRF5S19130 ,MRF5S19130R3, MRF5S19130SR3 1990 MHz, 26 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs MOTOROLA Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5S19 ..
MRF5S19130HR3 , Suitable for TDMA, CDMA and multicarrier amplifier applications.
MRF5S19150 ,MRF5S19150, MRF5S19150R3, MRF5S19150S, MRF5S19150SR3 1990 MHz, 32 W, 28 V Lateral N-Channel RF Power MOSFETs MOTOROLAFreescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5S191 ..
MRF5S19150HR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S21045NBR1 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MT28F800B3WG-9B , FLASH MEMORY
MT28F800B3WG-9B , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MT29F4G08ABADAWP , 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features

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MRF5S19130
MRF5S19130R3, MRF5S19130SR3 1990 MHz, 26 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
THERMAL CHARACTERISTICS