MRF5S19100L ,MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5S19 ..
MRF5S19130 ,MRF5S19130R3, MRF5S19130SR3 1990 MHz, 26 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R °C/WθJC ..
MRF5S19130 ,MRF5S19130R3, MRF5S19130SR3 1990 MHz, 26 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs MOTOROLA Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5S19 ..
MRF5S19130HR3 , Suitable for TDMA, CDMA and multicarrier amplifier applications.
MRF5S19150 ,MRF5S19150, MRF5S19150R3, MRF5S19150S, MRF5S19150SR3 1990 MHz, 32 W, 28 V Lateral N-Channel RF Power MOSFETs MOTOROLAFreescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5S191 ..
MRF5S19150HR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MT28F800B3WG-9B , FLASH MEMORY
MT28F800B3WG-9B , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MT29F4G08ABADAWP , 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features
MRF5S19100L
MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
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NChannel EnhancementMode Lateral MOSFETsDesigned for PCN and PCS base station applications with frequencies up to
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. Typical 2Carrier NCDMA Performance for VDD = 28 Volts, IDQ = 1000 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measuredover a 30 kHz Bandwidth at f1 885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.Output Power 22 Watts Avg.Power Gain 13.9 dBEfficiency 25.5% ACPR 50.7 dBIM3 36.5 dBc Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CWOutput Power Excellent Thermal Stability Characterized with Series Equivalent LargeSignal Impedance Parameters Qualified Up to a Maximum of 32 VDD Operation In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
