MRF5P21240 ,MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5P21 ..
MRF5S19100HSR3 ,1990 MHz, 22 W Avg., 28 V, 2 x N–CDMA Lateral N–Channel RF Power MOSFET MOTOROLA Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5S19 ..
MRF5S19100L ,MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5S19 ..
MRF5S19130 ,MRF5S19130R3, MRF5S19130SR3 1990 MHz, 26 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R °C/WθJC ..
MRF5S19130 ,MRF5S19130R3, MRF5S19130SR3 1990 MHz, 26 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs MOTOROLA Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5S19 ..
MRF5S19130HR3 , Suitable for TDMA, CDMA and multicarrier amplifier applications.
MT28F800B3WG-9B , FLASH MEMORY
MT28F800B3WG-9B , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MT29F4G08ABADAWP , 4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features
MRF5P21240
MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
The RF SubMicron MOSFET Line�� ����� ����� ������ � ���������
NChannel EnhancementMode Lateral MOSFETDesigned for WCDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCNPCS/cellular radio and WLL applications. Typical 2carrier WCDMA Performance for VDD = 28 Volts, IDQ = 2 x 1100 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.Output Power 52 Watts Avg.Power Gain 13 dBEfficiency 24% IM3 36 dBc ACPR 39 dBc Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 28 Vdc, f = 2140 MHz, 180 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent LargeSignal Impedance Parameters In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
