MRF5P20180 ,MRF5P20180R6 1990 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5P20 ..
MRF5P21045NR1 , RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF5P21180 ,MRF5P21180 2170 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R °C/WθJC ..
MRF5P21240 ,MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5P21 ..
MRF5S19100HSR3 ,1990 MHz, 22 W Avg., 28 V, 2 x N–CDMA Lateral N–Channel RF Power MOSFET MOTOROLA Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5S19 ..
MRF5S19100L ,MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF5S19 ..
MT28F400B5 , FLASH MEMORY
MT28F400B5 , FLASH MEMORY
MT28F800B3WG-9B , FLASH MEMORY
MT28F800B3WG-9B , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MT28F800B3WG-9BET , FLASH MEMORY
MRF5P20180
MRF5P20180R6 1990 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
The RF SubMicron MOSFET Line�� ����� ����� ������ � ���������
NChannel EnhancementMode Lateral MOSFETDesigned for WCDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCNPCS/cellular radio and WLL applications. Typical 2carrier WCDMA Performance for VDD = 28 Volts, IDQ = 2 x 800 mA, f1 = 1955 MHz, f2 = 1965 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.Output Power 38 Watts Avg.Power Gain 14 dBEfficiency 26% IM3 37.5 dBc ACPR 41 dBc Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CWOutput Power Excellent Thermal Stability Characterized with Series Equivalent LargeSignal Impedance Parameters Qualified Up to a Maximum of 32 VDD Operation In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
