MRF21180 ,MRF21180, MRF21180S 2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.46 °C ..
MRF247 ,RF POWER TRANSISTOR NPN SILICON**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF247/DThe RF Line ** *The MRF247 is designed ..
MRF281 ,MRF281SR1, MRF281ZR1 2000 MHz, 4 W, 26 V Lateral N-Channel Broadband RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF281/DThe RF Sub–Micron MOSFET Line ..
MRF281SR1 ,2000 MHz, 4 W, 26 V Lateral N–Channel Broadband RF Power MOSFETOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF281/DThe RF Sub–Micron MOSFET Line ..
MRF281ZR1 ,RF POWER FIELD EFFECT TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF282S ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF282/DThe RF Sub–Micron MOSFET Line** ** ** * ..
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MRF21180
MRF21180, MRF21180S 2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFETs
The RF Sub–Micron MOSFET Line�� ����� ����� ������ � ����������
N–Channel Enhancement–Mode Lateral MOSFETsDesigned for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications. Typical 2–carrier W–CDMA Performance for VDD = 28 Volts,
IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz,
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Output Power — 38 Watts (Avg.)
Power Gain — 12.1 dB
Efficiency — 22%
IM3 — 37.5 dBc
ACPR — –41 dBc Internally Input and Output Matched, for Ease of Use High Gain, High Efficiency, and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 170 Watts (CW)
Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
