MRF21090SR3 ,2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET
MRF21120 ,MRF21120 2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFETsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF21125 ,MRF21125, MRF21125S, MRF21125SR3 2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.53 °C ..
MRF21125S ,RF POWER FIELD EFFECT TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.53 °C ..
MRF21125SR3 ,RF POWER FIELD EFFECT TRANSISTORSOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF21125/DThe RF Sub–Micron MOSFET Line ..
MRF21180 ,MRF21180, MRF21180S 2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.46 °C ..
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MRF21090SR3
2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET