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Partno	Mfg	Dc	Qty	Available	Descript
MRF21090	摩托罗拉	N/a	512	avai	MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs
MRF21090	MALAYSIA	N/a	17	avai	MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs
MRF21090	FREE/MOT	N/a	31	avai	MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs
MRF21090	freescale	N/a	18	avai	MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs
MRF21090		N/a	2	avai	MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs

MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs
Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF21090/DThe RF Sub–Micron MOSFET Line
..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs
Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF21090/DThe RF Sub–Micron MOSFET Line
..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF21090 ,MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.65 °C ..
MRF21090SR3 ,2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY

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MRF21090
MRF21090, MRF21090S 2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs
The RF Sub–Micron MOSFET Line
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N–Channel Enhancement–Mode Lateral MOSFETs
Designed for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. Typical W–CDMA Performance for 2140 MHz, 28 Volts
4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH:
Output Power — 11.5 Watts
Efficiency — 16%
Gain — 12.2 dB
ACPR — –45 dBc Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 90 Watts CW
Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS

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