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Partno	Mfg	Dc	Qty	Available	Descript
MRF21010LSR1	FREESCALE	N/a	2277	avai	2170 MHz, 10 W, 28 V Lateral N–Channel Broadband RF Power MOSFET

MRF21010LSR1 ,2170 MHz, 10 W, 28 V Lateral N–Channel Broadband RF Power MOSFET
MRF21030 ,MRF21030R3, MRF21030LR3, MRF21030SR3, MRF21030LSR3 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 2.1 °C/ ..
MRF21030LR3 , RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF21045 ,MRF21045R3, MRF21045LR3, MRF21045SR3, MRF21045LSR3 2170 MHz, 45 W, 28 V Lateral N-Channel RF Power MOSFETs
Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF21045/DThe RF MOSFET Line
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MRF21045LR3 ,RF Power Field Effect Transistors MOTOROLA Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF2104 ..
MRF21045LSR3 ,2170 MHz, 45 W, 28 V Lateral N–Channel RF Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY

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MRF21010LSR1
2170 MHz, 10 W, 28 V Lateral N–Channel Broadband RF Power MOSFET

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