Home ›  M › M159 > MRF19090S,RF POWER FIELD EFFECT TRANSISTORS

MRF19090S Fast Delivery,Good Price
Part Number:

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
MRF19090S	MOTO	N/a	58	avai	RF POWER FIELD EFFECT TRANSISTORS
MRF19090S	FREESCAL	N/a	3	avai	RF POWER FIELD EFFECT TRANSISTORS
MRF19090S		N/a	630	avai	RF POWER FIELD EFFECT TRANSISTORS
MRF19090S	FREE/MOT	N/a	78	avai	RF POWER FIELD EFFECT TRANSISTORS
MRF19090S	Freescale	N/a	680	avai	RF POWER FIELD EFFECT TRANSISTORS

MRF19090S ,RF POWER FIELD EFFECT TRANSISTORS
Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF19090/DThe RF MOSFET Line

  ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORSTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.65 °C ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORSMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORS
Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF19090/DThe RF MOSFET Line

  ..
MRF19090S ,RF POWER FIELD EFFECT TRANSISTORSMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V +15, – ..
MRF19120 ,MRF19120, MRF19120S 1990 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFETsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY

---

MRF19090S
RF POWER FIELD EFFECT TRANSISTORS
The RF MOSFET Line
�� ����� ����� ������ � ����������
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for Class AB PCN and PCS base station applications with
frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and
multicarrier amplifier applications. Typical CDMA Performance: 1990 MHz, 26 Volts
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9 Watts
Power Gain — 10 dB
Adjacent Channel Power —
885 kHz: –47 dBc @ 30 kHz BW
1.25 MHz: –55 dBc @ 12.5 kHz BW
2.25 MHz: –55 dBc @ 1 MHz BW Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts (CW)
Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS

TEL:86-533-2716050      FAX:86-533-2716790     ©2020 IC PHOENIX CO.,LIMITED