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MRF19030MOTN/a1avaiMRF19030R3, MRF19030SR3 2.0 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs


MRF19030 ,MRF19030R3, MRF19030SR3 2.0 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF19030/DThe RF MOSFET Line   ..
MRF19030LSR3 , The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF19045 ,MRF19045R3, MRF19045SR3 1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF19045/DThe RF MOSFET Line   ..
MRF19045 ,MRF19045R3, MRF19045SR3 1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 1.65 °C ..
MRF19060 ,MRF19060, MRF19060R3, MRF19060SR3 1990 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.97 °C ..
MRF19085 ,MRF19085, MRF19085R3, MRF19085SR3, MRF19085LSR3 1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.64 °C ..
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY


MRF19030
MRF19030R3, MRF19030SR3 2.0 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line
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N–Channel Enhancement–Mode Lateral MOSFETs

Designed for class AB PCN and PCS base station applications with
frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and
multicarrier amplifier applications. CDMA Performance @ 1990 MHz, 26 Volts
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — –47 dBc @ 30 kHz BW
1.25 MHz — –55 dBc @ 12.5 kHz BW
2.25 MHz — –55 dBc @ 1 MHz BW
Output Power — 4.5 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 17% Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW
Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
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