MRF186 ,The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFETTHERMAL CHARACTERISTICS (2)Characteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.8 ..
MRF187 ,RF POWER FIELD EFFECT TRANSISTORSOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF187/DThe RF MOSFET Line ..
MRF19030 ,MRF19030R3, MRF19030SR3 2.0 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF19030/DThe RF MOSFET Line ..
MRF19030LSR3 , The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF19045 ,MRF19045R3, MRF19045SR3 1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFETsOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF19045/DThe RF MOSFET Line ..
MRF19045 ,MRF19045R3, MRF19045SR3 1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFETsTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 1.65 °C ..
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MRF186
The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET
The RF MOSFET Line�� ����� ������������ � ���������
N–Channel Enhancement–Mode Lateral MOSFETDesigned for broadband commercial and industrial applications with frequen-
cies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this
device make it ideal for large–signal, common source amplifier applications in 28
volt base station equipment. Guaranteed Performance @ 960 MHz, 28 Volts
Output Power — 120 Watts PEP
Power Gain — 11 dB
Efficiency — 30%
Intermodulation Distortion — –28 dBc Excellent Thermal Stability 100% Tested for Load Mismatch Stress at all Phase Angles with
5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW
MAXIMUM RATINGS (2)
THERMAL CHARACTERISTICS (2)
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
