MRF184S ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF185 ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFET**Order this documentSEMICONDUCTOR TECHNICAL DATAby MRF185/D* **The RF MOSFET Line** ** *85 WATTS, ..
MRF185 ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETMAXIMUM RATINGSRating Symbol Value UnitDrain–Source Voltage V 65 VdcDSSGate–Source Voltage V ±20 Vd ..
MRF185 ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.7 °C/ ..
MRF185 ,LATERAL N-CHANNEL BROADBAND RF POWER MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Uni ..
MRF186 ,The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFETTHERMAL CHARACTERISTICS (2)Characteristic Symbol Max UnitThermal Resistance, Junction to Case R 0.8 ..
MT28F004B5 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3 , FLASH MEMORY
MT28F008B3VG-9B , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MT28F008B3VG-9T , FLASH MEMORY
MRF184-MRF184S
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
The RF MOSFET Line- ---- ---
N–Channel Enhancement–Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications at frequen-
cies to 1.0 GHz. The high gain and broadband performance of these devices
makes them ideal for large–signal, common source amplifier applications in 28
volt base station equipment. Guaranteed Performance @ 945 MHz, 28 Volts
Output Power = 60 Watts
Power Gain = 11.5 dB
Efficiency = 53% Characterized with Series Equivalent Large–Signal
Impedance Parameters S–Parameter Characterization at High Bias Levels Excellent Thermal Stability Capable of Handling 30:1 VSWR @ 28 Vdc,
945 MHz
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
OFF CHARACTERISTICS
Order this document
by MRF184/D-
SEMICONDUCTOR TECHNICAL DATA
